参数项参数值
参数项参数值
Forward Transconductance - Min4.7 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage1 V
TechnologySi
Id - Continuous Drain Current3 A
Transistor PolarityP-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time2.6 ns
Width1.8 mm
Rds On - Drain-Source Resistance125 mOhms
Transistor Type1 P-Channel
Typical Turn-Off Delay Time26.2 ns
Height1.3 mm
Length3.1 mm
MXHTS85412101
KRHTS8541219000
Qg - Gate Charge17.7 nC
Mounting StyleSMD/SMT
Package / CaseSOT-26-6
JPHTS8541210101
CAHTS8541210000
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
PackagingCut Tape
PackagingMouseReel
PackagingReel
CNHTS8541210000
ProductMOSFET Small Signal
Factory Pack Quantity3000
BrandDiodes Incorporated
SeriesZXMP6A
Channel ModeEnhancement
Product TypeMOSFET
ManufacturerDiodes Incorporated
DescriptionMOSFET P-Ch 60 Volt 3.0A
TARIC8541210000
ImageDiodes Incorporated ZXMP6A17E6TA
Product CategoryMOSFET
Fall Time11.3 ns
RoHS Details
Unit Weight0.000529 oz
SubcategoryMOSFETs
Pd - Power Dissipation1.92 W
USHTS8541210095
Vds - Drain-Source Breakdown Voltage60 V
Number of Channels1 Channel
Rise Time3.4 ns
Moisture Sensitivity Level1 (Unlimited)