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DMN3026LVT-7
厂牌：DIODES(美台)
包装：--
类目：元器件 > 分立器件 > MOSFET
编号：B000052496414
描述：场效应管(MOSFET) 1.2W 30V 6.6A 1个N沟道
商品参数
参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage1 V
TechnologySi
Id - Continuous Drain Current6.6 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
KRHTS8541299000
Typical Turn-On Delay Time2.2 ns
ManufacturerDiodes Incorporated
Minimum Operating Temperature- 55 C
JPHTS8541290100
RoHS Details
CAHTS8541290000
Rds On - Drain-Source Resistance23 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time12.1 ns
Package / CaseTSOT-26-6
Factory Pack Quantity3000
BrandDiodes Incorporated
TARIC8541290000
Maximum Operating Temperature+ 150 C
Mounting StyleSMD/SMT
PackagingMouseReel
PackagingReel
PackagingCut Tape
ImageDiodes Incorporated DMN3026LVT-7
SubcategoryMOSFETs
Qg - Gate Charge12.5 nC
Product CategoryMOSFET
DescriptionMOSFET 30V N-Ch Enh Mode 20Vgss 1.2W 643pF
Product TypeMOSFET
MXHTS85412999
SeriesDMN3026
USHTS8541290095
Channel ModeEnhancement
Unit Weight1.375685 oz
Fall Time3 ns
CNHTS8541290000
Pd - Power Dissipation1.5 W
Vds - Drain-Source Breakdown Voltage30 V
Number of Channels1 Channel
Rise Time2.5 ns