参数项参数值
参数项参数值
Forward Transconductance - Min20 S
ConfigurationSingle
Transistor PolarityN-Channel
Id - Continuous Drain Current60 A
TechnologySi
Rds On - Drain-Source Resistance15 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time43 ns
Vgs - Gate-Source Voltage- 20 V, + 20 V
Height4.6 mm
Length10.4 mm
QualificationAEC-Q101
Typical Turn-On Delay Time16 ns
Factory Pack Quantity1000
MXHTS85412101
KRHTS8541299000
BrandSTMicroelectronics
Unit Weight0.139332 oz
Qg - Gate Charge66 nC
Mounting StyleSMD/SMT
CAHTS8541290000
Package / CaseTO-263-3
JPHTS8541290100
PackagingCut Tape
PackagingMouseReel
PackagingReel
Minimum Operating Temperature- 65 C
Maximum Operating Temperature+ 150 C
DescriptionMOSFET N-Ch 60 Volt 60 Amp
Channel ModeEnhancement
Product TypeMOSFET
ImageSTMicroelectronics STB60NF06T4
SeriesSTB60NF06
CNHTS8541210000
ManufacturerSTMicroelectronics
TARIC8541210000
Fall Time20 ns
Product CategoryMOSFET
RoHS Details
SubcategoryMOSFETs
Pd - Power Dissipation110 W
USHTS8541290095
TypeMOSFET
Vds - Drain-Source Breakdown Voltage60 V
Number of Channels1 Channel
Rise Time108 ns