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商品参数
参数项参数值
参数项参数值
Gain Bandwidth Product fT3 MHz
ConfigurationSingle
Collector- Base Voltage VCBO100 V
Maximum DC Collector Current25 A
Collector- Emitter Voltage VCEO Max100 V
Continuous Collector Current25 A
Transistor PolarityNPN
TechnologySi
Emitter- Base Voltage VEBO5 V
Minimum Operating Temperature- 65 C
Package / CaseTO-247-3
Length15.2 mm
Height16.2 - 4 mm
ManufacturerON Semiconductor
BrandON Semiconductor
Collector-Emitter Saturation Voltage1.8 V
PackagingTube
DC Collector/Base Gain hfe Min25
Product CategoryBipolar Transistors - BJT
DescriptionBipolar Transistors - BJT 25A 100V 125W NPN
Maximum Operating Temperature+ 150 C
Factory Pack Quantity30
Mounting StyleThrough Hole
RoHS Details
ImageON Semiconductor TIP35CG
SubcategoryTransistors
Product TypeBJTs - Bipolar Transistors
SeriesTIP35C
Unit Weight0.229281 oz
Pd - Power Dissipation125 W
Moisture Sensitivity LevelNot Applicable