参数项参数值
参数项参数值
Gain Bandwidth Product fT3 MHz
ConfigurationSingle
Collector- Base Voltage VCBO100 V
Maximum DC Collector Current25 A
Collector- Emitter Voltage VCEO Max100 V
Transistor PolarityNPN, PNP
TechnologySi
Emitter- Base Voltage VEBO5 V
BrandSTMicroelectronics
Package / CaseTO-247-3
Length15.75 mm
CAHTS8541290000
Height20.15 mm
Minimum Operating Temperature- 65 C
JPHTS8541290100
ManufacturerSTMicroelectronics
KRHTS8541299000
DC Collector/Base Gain hfe Min25
PackagingTube
TARIC8541210000
Factory Pack Quantity600
Maximum Operating Temperature+ 150 C
USHTS8541290095
Mounting StyleThrough Hole
Width5.15 mm
RoHS Details
ImageSTMicroelectronics TIP35CW
SubcategoryTransistors
Product TypeBJTs - Bipolar Transistors
MXHTS85412101
Product CategoryBipolar Transistors - BJT
SeriesTIP35CW
Unit Weight1.340411 oz
CNHTS8541210000
Pd - Power Dissipation125000 mW
Moisture Sensitivity Level1 (Unlimited)