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商品参数
参数项参数值
参数项参数值
DC Current Gain hFE Max300
Gain Bandwidth Product fT150 MHz
Collector- Base Voltage VCBO40 V
Maximum DC Collector Current1 A
Collector- Emitter Voltage VCEO Max40 V
Continuous Collector Current1 A
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO5 V
Collector-Emitter Saturation Voltage0.5 V
DC Collector/Base Gain hfe Min300 at 1 mA, 5 V, 300 at 500 mA, 5 V, 200 at 1 A, 5 V, 35 at 2 A, 5 V
Width3.7 mm
Height1.65 mm
Length6.7 mm
MXHTS85412999
KRHTS8541299000
Package / CaseSOT-223-4
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
CNHTS8541290000
PackagingReel
PackagingCut Tape
PackagingMouseReel
TARIC8541290000
RoHS Details
Unit Weight0.003951 oz
SeriesFZT491
ImageDiodes Incorporated FZT491ATA
BrandDiodes Incorporated
ManufacturerDiodes Incorporated
Pd - Power Dissipation2 W
Factory Pack Quantity1000
Product CategoryBipolar Transistors - BJT
Product TypeBJTs - Bipolar Transistors
SubcategoryTransistors
USHTS8541290075