5-103669-2TEN20-2412WIRTEN30-2412WIMAX660ESA+TDS600U+
在线商城 购物车
DMN2005UFG-13

DMN2005UFG-13

厂牌：DIODES(美台)
包装：--
类目：元器件 > 分立器件 > MOSFET
编号：B000052643523
描述：DIODES INC. - DMN2005UFG-13 - 功率场效应管, MOSFET, N通道, 20 V, 50 A, 0.004 ohm, PowerDI 3333, 表面安装 库存分布: Shanghai: 0 Shanghai: 0 Shanghai: 0 Shanghai: 0 Shanghai: 0 UK: 2820 SG: 0; packSize: 1; minimumOrderQty: 1; rohs: YES
最新价格近期成交5单+
数量价格（含税）
1¥2.6000
100¥2.0889
750¥1.8556
1500¥1.7556
3000¥1.6666
库存：27交期：3-5Days起订：1增量：1
数量：
X
2.6000（单价）
合计：
￥2.60
商品满500包邮
商品参数
参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage700 mV
TechnologySi
Id - Continuous Drain Current18.1 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 12 V, + 12 V
CNHTS8541290000
Typical Turn-On Delay Time12.4 ns
MXHTS85412999
Rds On - Drain-Source Resistance8.7 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time114 ns
KRHTS8541219000
JPHTS8541290100
Minimum Operating Temperature- 55 C
CAHTS8541290000
Mounting StyleSMD/SMT
Package / CasePowerDI3333-8
Maximum Operating Temperature+ 150 C
PackagingMouseReel
PackagingReel
PackagingCut Tape
Qg - Gate Charge68.8 nC
BrandDiodes Incorporated
TARIC8541290000
ManufacturerDiodes Incorporated
Factory Pack Quantity3000
ImageDiodes Incorporated DMN2005UFG-13
Product CategoryMOSFET
RoHS Details
SeriesDMN2005
DescriptionMOSFET 20V N-Ch Enh Mode FET 12Vgss 1.05W
Product TypeMOSFET
SubcategoryMOSFETs
Channel ModeEnhancement
USHTS8541210095
Fall Time38 ns
Unit Weight0.002540 oz
Pd - Power Dissipation2.27 W
Vds - Drain-Source Breakdown Voltage20 V
Number of Channels1 Channel
Rise Time25.7 ns
Moisture Sensitivity Level1 (Unlimited)