参数项参数值
参数项参数值
ConfigurationDual
QualificationAEC-Q101
Id - Continuous Drain Current6.2 A
Transistor PolarityN-Channel
TechnologySi
CNHTS8541290000
Rds On - Drain-Source Resistance30 mOhms
KRHTS8541299000
Vgs - Gate-Source Voltage- 20 V, + 20 V
Package / CaseDFN-2020-6
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
TARIC8541290000
MXHTS85412999
Product TypeMOSFET
SubcategoryMOSFETs
Minimum Operating Temperature- 55 C
CAHTS8541290000
JPHTS8541290100
PackagingReel
PackagingMouseReel
PackagingCut Tape
Qg - Gate Charge10.6 nC
BrandDiodes Incorporated
ManufacturerDiodes Incorporated
Factory Pack Quantity3000
DescriptionMOSFET Dual N-Ch Enh FET 30V 20Vgss 1.0W
ImageDiodes Incorporated DMN3032LFDBQ-7
Channel ModeEnhancement
RoHS Details
Product CategoryMOSFET
SeriesDMN3032
Unit Weight0.000238 oz
USHTS8541290095
Pd - Power Dissipation1.7 W
Number of Channels2 Channel