参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage1.8 V
TechnologySi
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Width5 mm
Height1 mm
Rds On - Drain-Source Resistance7.1 mOhms
Transistor Type1 N-Channel
MXHTS85412999
Length6 mm
KRHTS8541299000
Qg - Gate Charge9.6 nC
JPHTS8541290100
CAHTS8541290000
Package / CasePQFN-8
Mounting StyleSMD/SMT
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
CNHTS8541290000
TARIC8541290000
PackagingCut Tape
PackagingMouseReel
PackagingReel
RoHS Details
ImageInfineon / IR IRFH3702TRPBF
Channel ModeEnhancement
SubcategoryMOSFETs
BrandInfineon / IR
Factory Pack Quantity4000
Unit Weight0.017900 oz
Product TypeMOSFET
Product CategoryMOSFET
DescriptionMOSFET 30V 1 N-CH HEXFET 7.1mOhms 9.6nC
ManufacturerInfineon
USHTS8541290095
Pd - Power Dissipation2.8 W
Vds - Drain-Source Breakdown Voltage30 V
Number of Channels1 Channel