参数项参数值
参数项参数值
DC Current Gain hFE Max360
Gain Bandwidth Product fT125 MHz
ConfigurationSingle
Collector- Base Voltage VCBO45 V
Collector- Emitter Voltage VCEO Max45 V
Continuous Collector Current0.2 A
TechnologySi
KRHTS8541299000
Transistor PolarityNPN
Emitter- Base Voltage VEBO5 V
JPHTS8541290100
CAHTS8541290000
ImageROHM Semiconductor BCX70KT116
Collector-Emitter Saturation Voltage0.55 V
Product CategoryBipolar Transistors - BJT
DescriptionBipolar Transistors - BJT TRANS GP BJT NPN 45V 0.2A TR
Package / CaseSST-3
Maximum Operating Temperature+ 150 C
DC Collector/Base Gain hfe Min250
PackagingMouseReel
PackagingReel
PackagingCut Tape
Factory Pack Quantity3000
Mounting StyleSMD/SMT
RoHS Details
TARIC8541290000
BrandROHM Semiconductor
MXHTS85412999
ManufacturerROHM Semiconductor
SeriesBCX70
Product TypeBJTs - Bipolar Transistors
SubcategoryTransistors
USHTS8541290095
Unit Weight0.001058 oz
CNHTS8541290000
Part # AliasesBCX70K
Pd - Power Dissipation350 mW