参数项参数值
参数项参数值
Gain Bandwidth Product fT60 MHz
Collector- Base Voltage VCBO300 V
Maximum DC Collector Current0.1 A
Collector- Emitter Voltage VCEO Max300 V
Continuous Collector Current0.1 A
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO5 V
Collector-Emitter Saturation Voltage0.6 V
DC Collector/Base Gain hfe Min50
Width3.5 mm
Height1.57 mm
Length6.5 mm
MXHTS85411001
KRHTS8541299000
Package / CaseSOT-223-4
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
JPHTS8541210101
Minimum Operating Temperature- 65 C
CAHTS8541100090
CNHTS8541210000
PackagingReel
PackagingCut Tape
PackagingMouseReel
TARIC8541100000
RoHS Details
Unit Weight0.003951 oz
Pd - Power Dissipation1.5 W
ImageON Semiconductor BF720T1G
SeriesBF720
BrandON Semiconductor
Factory Pack Quantity1000
Product TypeBJTs - Bipolar Transistors
Product CategoryBipolar Transistors - BJT
SubcategoryTransistors
ManufacturerON Semiconductor
USHTS8541290075
DescriptionBipolar Transistors - BJT 100mA 300V NPN