IPD600N25N3GATMA1

IPD600N25N3GATMA1

厂牌：Infineon Technologies

包装：REEL 1

类目：元器件 > 分立器件 > MOSFET

编号：B000052645727

描述：Trans MOSFET N-CH 250V 25A 3-Pin(2+Tab) DPAK T/R

商品参数

参数项参数值

参数项参数值

Forward Transconductance - Min24 S

ConfigurationSingle

TechnologySi

Id - Continuous Drain Current25 A

Transistor PolarityN-Channel

Vgs th - Gate-Source Threshold Voltage2 V

Rds On - Drain-Source Resistance60 mOhms

Transistor Type1 N-Channel

Typical Turn-Off Delay Time22 ns

Vgs - Gate-Source Voltage- 20 V, + 20 V

Width6.22 mm

MXHTS85412999

Height2.3 mm

Typical Turn-On Delay Time10 ns

Length6.5 mm

KRHTS8541299000

CNHTS8541290000

RoHS Details

Qg - Gate Charge22 nC

DescriptionMOSFET TRENCH >=100V

Package / CaseTO-252-3

Maximum Operating Temperature+ 175 C

Mounting StyleSMD/SMT

Minimum Operating Temperature- 55 C

CAHTS8541290000

Channel ModeEnhancement

JPHTS8541290100

BrandInfineon Technologies

Fall Time8 ns

TARIC8541290000

PackagingReel

PackagingMouseReel

PackagingCut Tape

ImageInfineon Technologies IPD600N25N3GATMA1

Product CategoryMOSFET

SeriesOptiMOS 3

Unit Weight0.019401 oz

SubcategoryMOSFETs

ManufacturerInfineon

Factory Pack Quantity2500

Product TypeMOSFET

Pd - Power Dissipation136 W

Part # AliasesIPD600N25N3 G SP001127834

USHTS8541290095

Vds - Drain-Source Breakdown Voltage250 V

TradenameOptiMOS

Number of Channels1 Channel

Rise Time10 ns