参数项参数值
参数项参数值
Gain Bandwidth Product fT100 MHz
ConfigurationSingle
Collector- Base Voltage VCBO80 V
Collector- Emitter Voltage VCEO Max80 V
Continuous Collector Current500 mA
MXHTS85412101
Transistor PolarityNPN
TechnologySi
Emitter- Base Voltage VEBO4 V
KRHTS8541219000
Collector-Emitter Saturation Voltage0.25 V
Mounting StyleThrough Hole
JPHTS8541210101
Package / CaseTO-92-3
CNHTS8541210000
CAHTS8541210000
PackagingAmmo Pack
ImageRectron MPSA06
Factory Pack Quantity2000
Product CategoryBipolar Transistors - BJT
BrandRectron
RoHS Details
TARIC8541210000
SeriesMPSA
Product TypeBJTs - Bipolar Transistors
DescriptionBipolar Transistors - BJT NPN,0.5A,80V GenPur
SubcategoryTransistors
ManufacturerRectron
USHTS8541210075
Unit Weight0.016000 oz
Pd - Power Dissipation625 mW