参数项参数值
参数项参数值
TechnologySi
ConfigurationSingle
Id - Continuous Drain Current47 A
Transistor PolarityN-Channel
Vgs th - Gate-Source Threshold Voltage1.3 V
Rds On - Drain-Source Resistance9.7 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time50 ns
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time20 ns
RoHS Details
Qg - Gate Charge37 nC
ImageROHM Semiconductor RS1L145GNTB
Package / CaseHSOP-8
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
Channel ModeEnhancement
Fall Time17 ns
PackagingReel
PackagingCut Tape
TARIC8541290000
BrandROHM Semiconductor
Factory Pack Quantity2500
Product CategoryMOSFET
SubcategoryMOSFETs
Product TypeMOSFET
ManufacturerROHM Semiconductor
Pd - Power Dissipation31 W
USHTS8541290095
DescriptionMOSFET 60V N-CHANNEL 47A
Vds - Drain-Source Breakdown Voltage60 V
Number of Channels1 Channel
Rise Time12 ns