R6006JND3TL1

厂牌:ROHM
包装:REEL 1
类目:元器件 > 分立器件 > MOSFET
编号:B000052649474
描述:Trans MOSFET N-CH 600V 6A 3-Pin(2+Tab) DPAK T/R
最新价格近期成交28单+
数量价格(含税)
1¥7.7950
50¥5.8398
100¥5.3105
300¥4.9519
500¥4.8827
1000¥4.8315
2000¥4.8059
4000¥4.7897
库存:2,500交期:3-4 weeks起订:1增量:1
数量:
X
7.7950(单价)
合计:
¥7.80
商品满500包邮
商品参数
参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage5 V
TechnologySi
Id - Continuous Drain Current6 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 30 V, + 30 V
Typical Turn-On Delay Time16 ns
Rds On - Drain-Source Resistance936 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time30 ns
Qg - Gate Charge15.5 nC
Package / CaseTO-252-3
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
Channel ModeEnhancement
Fall Time27 ns
PackagingMouseReel
PackagingCut Tape
PackagingReel
TARIC8541290000
BrandROHM Semiconductor
RoHS Details
ImageROHM Semiconductor R6006JND3TL1
Product CategoryMOSFET
Factory Pack Quantity2500
SubcategoryMOSFETs
ManufacturerROHM Semiconductor
Product TypeMOSFET
Pd - Power Dissipation86 W
USHTS8541290095
Vds - Drain-Source Breakdown Voltage600 V
Number of Channels1 Channel
Rise Time14 ns
Moisture Sensitivity Level1 (Unlimited)