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R6006JND3TL1
厂牌：Rohm Semiconductor
包装：REEL 1
类目：元器件 > 分立器件 > MOSFET
编号：B000052649478
描述：Trans MOSFET N-CH 600V 6A 3-Pin(2+Tab) DPAK T/R
商品参数
参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage5 V
TechnologySi
Id - Continuous Drain Current6 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 30 V, + 30 V
Typical Turn-On Delay Time16 ns
Rds On - Drain-Source Resistance936 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time30 ns
Qg - Gate Charge15.5 nC
Package / CaseTO-252-3
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
Channel ModeEnhancement
Fall Time27 ns
PackagingMouseReel
PackagingCut Tape
PackagingReel
TARIC8541290000
BrandROHM Semiconductor
RoHS Details
ImageROHM Semiconductor R6006JND3TL1
Product CategoryMOSFET
Factory Pack Quantity2500
SubcategoryMOSFETs
ManufacturerROHM Semiconductor
Product TypeMOSFET
Pd - Power Dissipation86 W
USHTS8541290095
Vds - Drain-Source Breakdown Voltage600 V
Number of Channels1 Channel
Rise Time14 ns
Moisture Sensitivity Level1 (Unlimited)