SI1050X-T1-GE3

SI1050X-T1-GE3

厂牌：Vishay

包装：REEL 1

类目：元器件 > 分立器件 > MOSFET

编号：B000052649680

描述：MOSFET N-CH D-S 8V SC-89-6

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商品参数

参数项参数值

参数项参数值

Forward Transconductance - Min4.12 S

ConfigurationSingle

Vgs th - Gate-Source Threshold Voltage350 mV

TechnologySi

Id - Continuous Drain Current1.34 A

Transistor PolarityN-Channel

Vgs - Gate-Source Voltage- 5 V, + 5 V

Typical Turn-On Delay Time6.8 ns

Rds On - Drain-Source Resistance86 mOhms

Transistor Type1 N-Channel

Typical Turn-Off Delay Time25 ns

MXHTS85412101

KRHTS8541219000

Qg - Gate Charge7.7 nC

Package / CaseSC-89-6

Mounting StyleSMD/SMT

JPHTS8541210101

CAHTS8541210000

Maximum Operating Temperature+ 150 C

Minimum Operating Temperature- 55 C

PackagingReel

PackagingCut Tape

PackagingMouseReel

CNHTS8541210000

BrandVishay Semiconductors

SeriesSI1

ManufacturerVishay

Factory Pack Quantity3000

TARIC8541210000

Product CategoryMOSFET

Channel ModeEnhancement

RoHS Details

Product TypeMOSFET

DescriptionMOSFET 8V Vds 5V Vgs SC89-6

Fall Time6 ns

ImageVishay Semiconductors SI1050X-T1-GE3

SubcategoryMOSFETs

Unit Weight0.001129 oz

USHTS8541210095

Part # AliasesSI1050X-GE3

Pd - Power Dissipation236 mW

TradenameTrenchFET

Vds - Drain-Source Breakdown Voltage8 V

Number of Channels1 Channel