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IPB123N10N3GATMA1
厂牌：Infineon
包装：REEL 1
类目：元器件 > 分立器件 > MOSFET
编号：B000052649709
描述：IPB123N10N3 Series 100 V 12.3 mOhm 58 A Optimos Power Transistor - TO-263-3
商品参数
参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage2 V
TechnologySi
Id - Continuous Drain Current58 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time14 ns
Width9.25 mm
Rds On - Drain-Source Resistance10.7 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time24 ns
Height4.4 mm
MXHTS85412999
Length10 mm
KRHTS8541299000
Mounting StyleSMD/SMT
Qg - Gate Charge35 nC
JPHTS8541290100
CAHTS8541290000
Package / CaseTO-263-3
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
CNHTS8541290000
PackagingReel
PackagingMouseReel
PackagingCut Tape
TARIC8541290000
RoHS Details
ImageInfineon Technologies IPB123N10N3GATMA1
Channel ModeEnhancement
SeriesOptiMOS 3
SubcategoryMOSFETs
Fall Time5 ns
BrandInfineon Technologies
Factory Pack Quantity1000
Unit Weight0.139332 oz
Product CategoryMOSFET
Product TypeMOSFET
ManufacturerInfineon
DescriptionMOSFET N-Ch 100V 58A D2PAK-2 OptiMOS 3
USHTS8541290095
Pd - Power Dissipation94 W
Part # AliasesIPB123N10N3 G SP000485968
Vds - Drain-Source Breakdown Voltage100 V
TradenameOptiMOS
Number of Channels1 Channel
Rise Time8 ns