参数项参数值
参数项参数值
Forward Transconductance - Min10 s
ConfigurationSingle
Id - Continuous Drain Current40 A
Transistor PolarityP-Channel
Vgs th - Gate-Source Threshold Voltage4 V
TechnologySi
Width6.22 mm
Rds On - Drain-Source Resistance60 mOhms
Transistor Type1 P-Channel
Typical Turn-Off Delay Time72 ns
Height2.3 mm
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time14 ns
Length6.5 mm
MXHTS85412999
RoHS Details
ImageInfineon / IR IRF5210STRRPBF
KRHTS8541299000
Mounting StyleSMD/SMT
Product TypeMOSFET
USHTS8541290095
Qg - Gate Charge180 nC
Package / CaseTO-252-3
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
TARIC8541290000
PackagingCut Tape
PackagingMouseReel
PackagingReel
CNHTS8541290000
Channel ModeEnhancement
SubcategoryMOSFETs
ManufacturerInfineon
Factory Pack Quantity800
Product CategoryMOSFET
Fall Time81 ns
Unit Weight0.139332 oz
BrandInfineon / IR
DescriptionMOSFET 1 P-CH -100V HEXFET 60mOhms 120nC
Pd - Power Dissipation3.8 W
Vds - Drain-Source Breakdown Voltage100 V
Number of Channels1 Channel
Rise Time86 ns
Moisture Sensitivity Level1 (Unlimited)