参数项参数值
参数项参数值
Gain Bandwidth Product fT160 MHz
Collector- Base Voltage VCBO170 V
Maximum DC Collector Current3 A
Collector- Emitter Voltage VCEO Max100 V
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO7 V
Width1.4 mm
Height1 mm
Length3.05 mm
MXHTS85412999
KRHTS8541299000
Mounting StyleSMD/SMT
Package / CaseSOT-23-3
JPHTS8541290100
CAHTS8541290000
Maximum Operating Temperature+ 150 C
PackagingReel
PackagingMouseReel
PackagingCut Tape
Minimum Operating Temperature- 55 C
Factory Pack Quantity3000
CNHTS8541290000
BrandDiodes Incorporated
Product TypeBJTs - Bipolar Transistors
ImageDiodes Incorporated ZXTN25100BFHTA
SeriesZXTN25100
TARIC8541290000
ManufacturerDiodes Incorporated
Product CategoryBipolar Transistors - BJT
RoHS Details
Unit Weight0.001093 oz
SubcategoryTransistors
Pd - Power Dissipation1810 mW
USHTS8541290095