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SI7450DP-T1-GE3

SI7450DP-T1-GE3

厂牌：VISHAY(威世)
包装：--
类目：元器件 > 分立器件 > MOSFET
编号：B000052655120
描述：MOSFET N-CH 200V 3.2A PPAK 8SOIC
最新价格近期成交8单+
数量价格（含税）
1¥14.5223
100¥12.6333
750¥11.4888
1500¥11.0445
3000¥10.6777
库存：95交期：3-5Days起订：1增量：1
数量：
X
14.5223（单价）
合计：
￥14.52
商品满500包邮
商品参数
参数项参数值
参数项参数值
ConfigurationSingle
TechnologySi
Transistor PolarityN-Channel
Id - Continuous Drain Current5.3 A
KRHTS8541299000
Vgs - Gate-Source Voltage- 20 V, + 20 V
JPHTS8541290100
Product CategoryMOSFET
CAHTS8541290000
Minimum Operating Temperature- 55 C
ImageVishay Semiconductors SI7450DP-T1-GE3
Rds On - Drain-Source Resistance80 mOhms
Maximum Operating Temperature+ 150 C
Package / CasePowerPAK-SO-8
PackagingCut Tape
PackagingReel
PackagingMouseReel
DescriptionMOSFET 200V Vds 20V Vgs PowerPAK SO-8
Mounting StyleSMD/SMT
TARIC8541290000
Factory Pack Quantity3000
ManufacturerVishay
Product TypeMOSFET
Qg - Gate Charge42 nC
BrandVishay Semiconductors
RoHS Details
MXHTS85412999
SubcategoryMOSFETs
SeriesSI7
USHTS8541290095
Channel ModeEnhancement
Unit Weight0.017870 oz
CNHTS8541290000
Part # AliasesSI7450DP-GE3
Pd - Power Dissipation5.2 W
TradenameTrenchFET
Number of Channels1 Channel