参数项参数值
参数项参数值
DC Current Gain hFE Max250
Gain Bandwidth Product fT150 MHz
Collector- Base Voltage VCBO100 V
Maximum DC Collector Current1 A
Collector- Emitter Voltage VCEO Max80 V
Continuous Collector Current1 A
TechnologySi
ConfigurationSingle
Transistor PolarityNPN
Collector-Emitter Saturation Voltage0.5 V
Emitter- Base Voltage VEBO5 V
DC Collector/Base Gain hfe Min100
QualificationAEC-Q101
Mounting StyleSMD/SMT
Minimum Operating Temperature- 65 C
Package / CaseSOT-223-3
CNHTS8541290000
Maximum Operating Temperature+ 150 C
PackagingReel
PackagingMouseReel
PackagingCut Tape
Unit Weight4 oz
TARIC8541210000
RoHS Details
Pd - Power Dissipation2 W
ImageDiodes Incorporated BCP5616QTA
Factory Pack Quantity1000
DescriptionBipolar Transistors - BJT Pwr Mid Perf Transistor
USHTS8541290095
BrandDiodes Incorporated
ManufacturerDiodes Incorporated
Product TypeBJTs - Bipolar Transistors
Product CategoryBipolar Transistors - BJT
SubcategoryTransistors
Moisture Sensitivity Level1 (Unlimited)