参数项参数值
参数项参数值
Gain Bandwidth Product fT130 MHz
Collector- Base Voltage VCBO100 V
Maximum DC Collector Current1 A
Collector- Emitter Voltage VCEO Max80 V
Continuous Collector Current1 A
TechnologySi
ConfigurationSingle
Transistor PolarityNPN
MXHTS85412999
Emitter- Base Voltage VEBO5 V
Collector-Emitter Saturation Voltage0.5 V
Width3.5 mm
DC Collector/Base Gain hfe Min25
KRHTS8541299000
Height1.57 mm
Length6.5 mm
RoHS Details
Factory Pack Quantity4000
ManufacturerON Semiconductor
CNHTS8541290000
Package / CaseSOT-223-4
JPHTS8541290100
Mounting StyleSMD/SMT
PackagingCut Tape
PackagingMouseReel
PackagingReel
CAHTS8541290000
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 65 C
ImageON Semiconductor BCP56-16T3G
TARIC8541290000
SeriesBCP56
Unit Weight0.003951 oz
BrandON Semiconductor
Product TypeBJTs - Bipolar Transistors
DescriptionBipolar Transistors - BJT 1A 100V NPN
Pd - Power Dissipation1.5 W
SubcategoryTransistors
Product CategoryBipolar Transistors - BJT
USHTS8541290075
Moisture Sensitivity Level1 (Unlimited)