参数项参数值
参数项参数值
DC Current Gain hFE Max250 at 150 mA, 2 V
Gain Bandwidth Product fT125 MHz
Collector- Base Voltage VCBO100 V
ConfigurationSingle
Maximum DC Collector Current1 A
Collector- Emitter Voltage VCEO Max80 V
Continuous Collector Current1 A
Transistor PolarityNPN
TechnologySi
Emitter- Base Voltage VEBO5 V
Collector-Emitter Saturation Voltage0.5 V
DC Collector/Base Gain hfe Min25 at 5 mA, 2 V
Mounting StyleSMD/SMT
Factory Pack Quantity1000
CNHTS8541290000
MXHTS85412101
KRHTS8541299000
Unit Weight0.003951 oz
JPHTS8541300003
Package / CaseSOT-223-4
CAHTS8541300000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
ManufacturerDiodes Incorporated
SeriesBCP56
PackagingCut Tape
PackagingMouseReel
PackagingReel
TARIC8541300000
Product CategoryBipolar Transistors - BJT
BrandDiodes Incorporated
ImageDiodes Incorporated BCP5616TA
SubcategoryTransistors
Product TypeBJTs - Bipolar Transistors
RoHS Details
USHTS8541290095
Pd - Power Dissipation2 W
Moisture Sensitivity Level1 (Unlimited)