SI4850BDY-T1-GE3

厂牌：Vishay

包装：REEL 1

类目：元器件 > 分立器件 > MOSFET

编号：B000052662148

描述：MOSFET N-CH 60V 11.3A SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id:11.3A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.016ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.8V; Power Dissipation Pd:4.5W; Transistor Case Style:SOIC; No. of Pins:8Pins; Operating Temperature Max:150蚓; Product Range:TrenchFET Gen IV Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018)

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商品参数

参数项参数值

Forward Transconductance - Min39 S

ConfigurationSingle

Vgs th - Gate-Source Threshold Voltage2.8 V

TechnologySi

Id - Continuous Drain Current11.3 A

Transistor PolarityN-Channel

Vgs - Gate-Source Voltage- 20 V, + 20 V

Typical Turn-On Delay Time7 ns

Rds On - Drain-Source Resistance19.5 mOhms

Transistor Type1 N-Channel

Typical Turn-Off Delay Time10 ns

Qg - Gate Charge11.1 nC

Package / CaseSO-8

Mounting StyleSMD/SMT

Maximum Operating Temperature+ 150 C

Minimum Operating Temperature- 55 C

Channel ModeEnhancement

PackagingCut Tape

PackagingMouseReel

PackagingReel

Fall Time10 ns

RoHS Details

BrandVishay / Siliconix

ImageVishay / Siliconix SI4850BDY-T1-GE3

Unit Weight0.009360 oz

Product TypeMOSFET

Factory Pack Quantity2500

Product CategoryMOSFET

SubcategoryMOSFETs

ManufacturerVishay

Pd - Power Dissipation4.5 W

DescriptionMOSFET 60V Vds 20V Vgs SO-8

Vds - Drain-Source Breakdown Voltage60 V

Number of Channels1 Channel

Rise Time21 ns

Moisture Sensitivity Level1 (Unlimited)