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商品参数
参数项参数值
参数项参数值
DC Current Gain hFE Max270
Gain Bandwidth Product fT80 MHz
Collector- Base Voltage VCBO100 V
Maximum DC Collector Current5 A
Collector- Emitter Voltage VCEO Max60 V
Continuous Collector Current5 A
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO5 V
DC Collector/Base Gain hfe Min120
Width5.5 mm
Height2.3 mm
Length6.5 mm
MXHTS85412999
KRHTS8541299000
Mounting StyleSMD/SMT
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
CNHTS8541290000
PackagingMouseReel
PackagingCut Tape
PackagingReel
TARIC8541290000
RoHS Details
Unit Weight0.050459 oz
Series2SC5103
Factory Pack Quantity2500
Product TypeBJTs - Bipolar Transistors
Pd - Power Dissipation1 W
BrandROHM Semiconductor
Product CategoryBipolar Transistors - BJT
SubcategoryTransistors
DescriptionBipolar Transistors - BJT NPN;CPT3 HFE RANK 'Q
ManufacturerROHM Semiconductor
USHTS8541290095
Moisture Sensitivity Level1 (Unlimited)