参数项参数值
参数项参数值
ConfigurationSingle
DC Current Gain hFE Max250 at - 150 mA, - 2 V
KRHTS8541299000
Gain Bandwidth Product fT145 MHz
JPHTS8541290100
CAHTS8541290000
ImageNexperia BC52PASX
Collector- Base Voltage VCBO- 60 V
Maximum DC Collector Current- 2 A
Collector- Emitter Voltage VCEO Max- 60 V
Continuous Collector Current- 1 A
DescriptionBipolar Transistors - BJT 1A PNP Medium Power Transistors
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO- 5 V
Minimum Operating Temperature- 55 C
QualificationAEC-Q101
Collector-Emitter Saturation Voltage- 500 mV
PackagingReel
PackagingCut Tape
PackagingMouseReel
Package / CaseDFN-2020D-3
Product CategoryBipolar Transistors - BJT
DC Collector/Base Gain hfe Min63 at - 150 mA, - 2 V
Factory Pack Quantity3000
Maximum Operating Temperature+ 150 C
Mounting StyleSMD/SMT
Product TypeBJTs - Bipolar Transistors
BrandNexperia
RoHS Details
MXHTS85412999
ManufacturerNexperia
TARIC8541290000
SubcategoryTransistors
USHTS8541290075
CNHTS8541290000
Part # Aliases934068117115
Pd - Power Dissipation1.65 W