参数项参数值
参数项参数值
ConfigurationSingle
Forward Transconductance - Min6.4 S
TechnologySi
Vgs th - Gate-Source Threshold Voltage3 V
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 30 V, + 30 V
KRHTS8541299000
Minimum Operating Temperature- 55 C
Length15.87 mm
Height20.82 mm
JPHTS8541290100
Typical Turn-On Delay Time80 ns
CAHTS8541290000
Rds On - Drain-Source Resistance270 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time32 ns
Package / CaseTO-247-3
ImageVishay / Siliconix SIHG20N50C-E3
RoHS Details
PackagingTube
Width5.31 mm
Maximum Operating Temperature+ 150 C
TARIC8541290000
BrandVishay / Siliconix
Mounting StyleThrough Hole
Product CategoryMOSFET
SubcategoryMOSFETs
DescriptionMOSFET 500V Vds 30V Vgs TO-247AC
ManufacturerVishay
Factory Pack Quantity500
Qg - Gate Charge65 nC
MXHTS85412999
Product TypeMOSFET
USHTS8541290095
Channel ModeEnhancement
Unit Weight0.211644 oz
Fall Time44 ns
CNHTS8541210000
Pd - Power Dissipation250 mW
Vds - Drain-Source Breakdown Voltage500 V
Number of Channels1 Channel
Rise Time27 ns
Moisture Sensitivity Level1 (Unlimited)