参数项参数值
参数项参数值
ConfigurationSingle
TechnologySi
Id - Continuous Drain Current500 mA
Transistor PolarityN-Channel
Vgs th - Gate-Source Threshold Voltage800 mV
Rds On - Drain-Source Resistance400 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time16 ns
Vgs - Gate-Source Voltage- 12 V, + 12 V
MXHTS85423201
QualificationAEC-Q101
Typical Turn-On Delay Time9 ns
RoHS Details
CNHTS8541210000
Qg - Gate Charge2 nC
DescriptionMOSFET Nch 30V Vds 0.5A 0.65Rds(on) 2Qg
Package / CaseSMT3-3
Maximum Operating Temperature+ 150 C
Mounting StyleSMD/SMT
Minimum Operating Temperature- 55 C
CAHTS8542320040
Channel ModeEnhancement
Fall Time31 ns
BrandROHM Semiconductor
TARIC8541290000
PackagingCut Tape
PackagingMouseReel
PackagingReel
ImageROHM Semiconductor RJK005N03FRAT146
SubcategoryMOSFETs
Unit Weight0.001724 oz
Product CategoryMOSFET
Factory Pack Quantity3000
ManufacturerROHM Semiconductor
Product TypeMOSFET
Pd - Power Dissipation200 mW
Part # AliasesRJK005N03FRA
USHTS8542320051
Vds - Drain-Source Breakdown Voltage30 V
Number of Channels1 Channel
Rise Time11 ns