MMBT4401LT1G

厂牌：onsemi

包装：REEL 1

类目：元器件 > 分立器件 > 双极晶体管

编号：B000052810088

描述：Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-236 Trans GP BJT NPN 40V 0.6A 300mW 3-Pin SOT-23 T/R

商品参数

参数项参数值

Gain Bandwidth Product fT250 MHz

Collector- Base Voltage VCBO60 V

ConfigurationSingle

Maximum DC Collector Current0.6 A

Collector- Emitter Voltage VCEO Max40 V

Continuous Collector Current0.6 A

Transistor PolarityNPN

TechnologySi

Emitter- Base Voltage VEBO6 V

MXHTS85412101

Height0.94 mm

KRHTS8541219000

Collector-Emitter Saturation Voltage0.75 V

DC Collector/Base Gain hfe Min20

Factory Pack Quantity3000

Length2.9 mm

Width1.3 mm

PackagingCut Tape

PackagingMouseReel

PackagingReel

JPHTS8541210101

Minimum Operating Temperature- 55 C

Package / CaseSOT-23-3

CAHTS8541210000

CNHTS8541210000

Mounting StyleSMD/SMT

Maximum Operating Temperature+ 150 C

ImageON Semiconductor MMBT4401LT1G

BrandON Semiconductor

TARIC8541210000

DescriptionBipolar Transistors - BJT 600mA 60V NPN

RoHS Details

Product CategoryBipolar Transistors - BJT

SeriesMMBT4401L

ManufacturerON Semiconductor

SubcategoryTransistors

Unit Weight0.001058 oz

USHTS8541210095

Pd - Power Dissipation225 mW

Moisture Sensitivity Level1 (Unlimited)