参数项参数值
参数项参数值
ConfigurationSingle
TechnologySi
Id - Continuous Drain Current76 A
Transistor PolarityP-Channel
Vgs th - Gate-Source Threshold Voltage1 V
Rds On - Drain-Source Resistance4.1 mOhms
Transistor Type1 P-Channel
Typical Turn-Off Delay Time260 ns
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time25 ns
RoHS Details
Qg - Gate Charge130 nC
DescriptionMOSFET -30V P-CHANNEL -76A
Package / CaseHSOP-8
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
Channel ModeEnhancement
Fall Time140 ns
BrandROHM Semiconductor
PackagingCut Tape
PackagingReel
ImageROHM Semiconductor RS1E220ATTB1
SubcategoryMOSFETs
Product CategoryMOSFET
Factory Pack Quantity2500
ManufacturerROHM Semiconductor
Product TypeMOSFET
Pd - Power Dissipation34 W
Vds - Drain-Source Breakdown Voltage30 V
Number of Channels1 Channel
Rise Time40 ns