参数项参数值
参数项参数值
DC Current Gain hFE Max300
Gain Bandwidth Product fT200 MHz
Height1.57 mm
Length6.5 mm
Collector- Base Voltage VCBO- 60 V
Maximum DC Collector Current0.6 A
Collector- Emitter Voltage VCEO Max- 60 V
Continuous Collector Current- 0.6 A
ConfigurationSingle
Transistor PolarityPNP
TechnologySi
Emitter- Base Voltage VEBO5 V
Package / CaseSOT-223-4
Factory Pack Quantity1000
CAHTS8541210000
KRHTS8541299000
Collector-Emitter Saturation Voltage- 1.6 V
Product TypeBJTs - Bipolar Transistors
BrandON Semiconductor
ManufacturerON Semiconductor
MXHTS85412101
Minimum Operating Temperature- 65 C
JPHTS8541210101
RoHS Details
TARIC8541210000
Mounting StyleSMD/SMT
USHTS8541290075
Maximum Operating Temperature+ 150 C
Width3.5 mm
PackagingReel
PackagingCut Tape
PackagingMouseReel
ImageON Semiconductor PZT2907AT1G
SubcategoryTransistors
Product CategoryBipolar Transistors - BJT
DescriptionBipolar Transistors - BJT 600mA 60V PNP
SeriesPZT2907A
Unit Weight0.006702 oz
CNHTS8541290000
Pd - Power Dissipation1.5 W
Moisture Sensitivity Level1 (Unlimited)