参数项参数值
参数项参数值
DC Current Gain hFE Max270
Gain Bandwidth Product fT80 MHz
Collector- Base Voltage VCBO- 100 V
Maximum DC Collector Current- 5 A
Collector- Emitter Voltage VCEO Max- 60 V
Continuous Collector Current- 5 A
TechnologySi
ConfigurationSingle
Transistor PolarityPNP
Collector-Emitter Saturation Voltage- 0.3 V
Emitter- Base Voltage VEBO- 5 V
DC Collector/Base Gain hfe Min120
CAHTS8541290000
Height2.3 mm
Width5.5 mm
Length6.5 mm
Maximum Operating Temperature+ 150 C
MXHTS85412999
KRHTS8541299000
SubcategoryTransistors
JPHTS8541290100
Mounting StyleSMD/SMT
CNHTS8541290000
PackagingMouseReel
PackagingCut Tape
PackagingReel
RoHS Details
TARIC8541290000
Unit Weight0.033414 oz
Series2SA1880
Factory Pack Quantity2500
Pd - Power Dissipation10 W
Product TypeBJTs - Bipolar Transistors
DescriptionBipolar Transistors - BJT PNP 60V 5A
BrandROHM Semiconductor
Product CategoryBipolar Transistors - BJT
ManufacturerROHM Semiconductor
USHTS8541290095
Moisture Sensitivity Level1 (Unlimited)