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RQ3E120ATTB
厂牌：Rohm Semiconductor
包装：REEL 1
类目：元器件 > 分立器件 > MOSFET
编号：B000052812443
描述：RQ3E120AT Series -30 V -39 A 8 mOhm Surface Mount Power Mosfet - HSMT-8
商品参数
参数项参数值
参数项参数值
TechnologySi
ConfigurationSingle
Id - Continuous Drain Current12 A
Transistor PolarityP-Channel
Vgs th - Gate-Source Threshold Voltage2.5 V
Rds On - Drain-Source Resistance61 mOhms
Transistor Type1 P-Channel
Typical Turn-Off Delay Time140 ns
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time20 ns
Height0.85 mm
Minimum Operating Temperature- 55 C
Width2.4 mm
CAHTS8541290000
MXHTS85412999
Length3 mm
KRHTS8541299000
Qg - Gate Charge62 nC
ManufacturerROHM Semiconductor
SubcategoryMOSFETs
JPHTS8541290100
Package / CaseHSMT-8
Channel ModeEnhancement
Mounting StyleSMD/SMT
CNHTS8541290000
Maximum Operating Temperature+ 150 C
PackagingCut Tape
PackagingMouseReel
PackagingReel
Fall Time95 ns
TARIC8541290000
ImageROHM Semiconductor RQ3E120ATTB
Unit Weight0.008517 oz
RoHS Details
Factory Pack Quantity3000
BrandROHM Semiconductor
Pd - Power Dissipation2 W
Product TypeMOSFET
Part # AliasesRQ3E120AT
Product CategoryMOSFET
DescriptionMOSFET -30V P-CHANNEL -12A
Vds - Drain-Source Breakdown Voltage39 V
USHTS8541290095
Number of Channels1 Channel
Rise Time30 ns
Moisture Sensitivity Level1 (Unlimited)