参数项参数值
参数项参数值
ConfigurationSingle
DescriptionMOSFET 650V 93A 339W SIC 22mOhm TO-247N
ImageROHM Semiconductor SCT3022ALHRC11
QualificationAEC-Q101
Minimum Operating Temperature- 55 C
Forward Transconductance - Min12.2 S
Transistor PolarityN-Channel
Id - Continuous Drain Current93 A
Vgs th - Gate-Source Threshold Voltage2.7 V
TechnologySiC
Rds On - Drain-Source Resistance22 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time61 ns
PackagingTube
Vgs - Gate-Source Voltage- 4 V, + 22 V
Package / CaseTO-247-3
Product CategoryMOSFET
Product TypeMOSFET
BrandROHM Semiconductor
Typical Turn-On Delay Time25 ns
Factory Pack Quantity30
Maximum Operating Temperature+ 175 C
Mounting StyleThrough Hole
RoHS Details
SeriesSCT3x
ManufacturerROHM Semiconductor
Qg - Gate Charge133 nC
TARIC8541290000
SubcategoryMOSFETs
Channel ModeEnhancement
USHTS8541290095
Fall Time35 ns
Unit Weight0.364011 oz
Pd - Power Dissipation339 W
Vds - Drain-Source Breakdown Voltage650 V
Number of Channels1 Channel
Rise Time53 ns
Moisture Sensitivity Level1 (Unlimited)