在线商城 
IRFB5620PBF
厂牌：Infineon(英飞凌)
包装：--
类目：元器件 > 分立器件 > MOSFET
编号：B000052832229
描述：MOSFET N-CH 200V 25A TO-220AB
商品参数
参数项参数值
参数项参数值
Forward Transconductance - Min37 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage1.8 V
TechnologySi
Id - Continuous Drain Current25 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time8.6 ns
Width4.4 mm
Rds On - Drain-Source Resistance72.5 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time17.1 ns
Length10 mm
Height15.65 mm
MXHTS85412999
KRHTS8541299000
Qg - Gate Charge25 nC
Package / CaseTO-220-3
Mounting StyleThrough Hole
JPHTS8541290100
CAHTS8541290000
Maximum Operating Temperature+ 175 C
Minimum Operating Temperature- 55 C
PackagingTube
CNHTS8541290000
BrandInfineon / IR
Factory Pack Quantity1000
Channel ModeEnhancement
TARIC8541290000
ManufacturerInfineon
Product CategoryMOSFET
RoHS Details
DescriptionMOSFET Audio MOSFT 200V 25A 72.5mOhm 25nC
Fall Time9.9 ns
ImageInfineon / IR IRFB5620PBF
Product TypeMOSFET
SubcategoryMOSFETs
Unit Weight0.211644 oz
USHTS8541290095
Pd - Power Dissipation144 W
Vds - Drain-Source Breakdown Voltage200 V
Number of Channels1 Channel
Rise Time14.6 ns