参数项参数值
参数项参数值
ConfigurationSingle
MXHTS85412999
TechnologySi
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Length6 mm
KRHTS8541299000
Height1 mm
Rds On - Drain-Source Resistance11.6 mOhms
Transistor Type1 N-Channel
Minimum Operating Temperature- 55 C
JPHTS8541290100
CAHTS8541290000
Package / CaseVSONP-8
Maximum Operating Temperature+ 150 C
CNHTS8541290000
Mounting StyleSMD/SMT
Qg - Gate Charge15.1 nC
ImageTexas Instruments CSD17579Q5A
Factory Pack Quantity2500
PackagingMouseReel
PackagingReel
PackagingCut Tape
Product TypeMOSFET
DescriptionMOSFET
Product CategoryMOSFET
BrandTexas Instruments
TARIC8541290000
RoHS Details
SubcategoryMOSFETs
SeriesCSD17579Q5A
ManufacturerTexas Instruments
Channel ModeEnhancement
Unit Weight0.002677 oz
USHTS8541290095
Pd - Power Dissipation36 W
TradenameNexFET
Vds - Drain-Source Breakdown Voltage30 V
Number of Channels1 Channel