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商品参数
参数项参数值
参数项参数值
TechnologySi
ConfigurationSingle
Id - Continuous Drain Current2 A
Transistor PolarityN-Channel
Rds On - Drain-Source Resistance138 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time17 ns
Vgs - Gate-Source Voltage- 12 V, + 12 V
Width1.6 mm
Typical Turn-On Delay Time8 ns
JPHTS8541290100
Height0.85 mm
Maximum Operating Temperature+ 150 C
ProductMOSFET Small Signal
MXHTS85412999
Length2.9 mm
KRHTS8541299000
TARIC8541290000
ManufacturerROHM Semiconductor
Package / CaseSOT-457-6
Channel ModeEnhancement
CNHTS8541290000
Mounting StyleSMD/SMT
CAHTS8541290000
Minimum Operating Temperature- 55 C
PackagingCut Tape
PackagingMouseReel
PackagingReel
Fall Time11 ns
RoHS Details
SeriesRTQ020N03
Unit Weight0.000494 oz
ImageROHM Semiconductor RTQ020N03TR
BrandROHM Semiconductor
Pd - Power Dissipation1.25 W
Factory Pack Quantity3000
Product TypeMOSFET
Part # AliasesRTQ020N03
TypeMOSFET
Product CategoryMOSFET
SubcategoryMOSFETs
DescriptionMOSFET N-CH 30V 2A TSMT6
Vds - Drain-Source Breakdown Voltage30 V
USHTS8541290095
Number of Channels1 Channel
Rise Time11 ns
Moisture Sensitivity Level1 (Unlimited)