RJ1U330AAFRGTL

厂牌：Rohm Semiconductor

包装：REEL 1

类目：元器件 > 分立器件 > MOSFET

编号：B000052843982

描述：MOSFET N-CH 250V 33A 150DEG C 211W; Transistor Polarity:N Channel; Continuous Drain Current Id:33A; Drain Source Voltage Vds:250V; On Resistance Rds(on):0.077ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power Dissipation Pd:211W; Transistor Case Style:TO-263; No. of Pins:3Pins; Operating Temperature Max:150蚓; Product Range:-; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)

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商品参数

参数项参数值

ConfigurationSingle

TechnologySi

Id - Continuous Drain Current16.5 A

Transistor PolarityN-Channel

Vgs th - Gate-Source Threshold Voltage3 V

Rds On - Drain-Source Resistance77 mOhms

Transistor Type1 N-Channel

Typical Turn-Off Delay Time120 ns

Vgs - Gate-Source Voltage- 30 V, + 30 V

MXHTS85423201

QualificationAEC-Q101

Typical Turn-On Delay Time50 ns

CNHTS8542320000

RoHS Details

Qg - Gate Charge80 nC

DescriptionMOSFET Nch 250V Vds 33A 0.077Rds(on) 80Qg

Package / CaseD2PAK-3

Maximum Operating Temperature+ 150 C

Mounting StyleSMD/SMT

CAHTS8542320040

Minimum Operating Temperature- 55 C

Channel ModeEnhancement

Fall Time140 ns

BrandROHM Semiconductor

TARIC8541290000

PackagingReel

PackagingCut Tape

PackagingMouseReel

ImageROHM Semiconductor RJ1U330AAFRGTL

Product CategoryMOSFET

SubcategoryMOSFETs

Factory Pack Quantity1000

ManufacturerROHM Semiconductor

Product TypeMOSFET

Pd - Power Dissipation211 W

Part # AliasesRJ1U330AAFRG

USHTS8542320051

Vds - Drain-Source Breakdown Voltage250 V

Number of Channels1 Channel

Rise Time200 ns