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商品参数
参数项参数值
参数项参数值
PackagingCut Tape (CT)
Package / Case6-PowerUDFN
Mounting TypeSurface Mount
Configuration2 P-Channel
Operating Temperature150°C (TJ)
TechnologyMOSFET (Metal Oxide)
Power - Max2W (Ta)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C1A (Ta)
Input Capacitance (Ciss) (Max) @ Vds90pF @ 50V
Rds On (Max) @ Id, Vgs840mOhm @ 1A, 10V
Gate Charge (Qg) (Max) @ Vgs6.7nC @ 10V
FET Feature-
Vgs(th) (Max) @ Id2.5V @ 1mA
Supplier Device PackageHUML2020L8
Moisture Sensitivity Level1 (Unlimited)