参数项参数值
参数项参数值
Gain Bandwidth Product fT250 MHz
ConfigurationDual
Collector- Base Voltage VCBO- 40 V
Maximum DC Collector Current0.2 A
Collector- Emitter Voltage VCEO Max- 40 V
MXHTS85412101
Continuous Collector Current- 200 mAdc
Transistor PolarityPNP
TechnologySi
Emitter- Base Voltage VEBO5 V
KRHTS8541219000
Collector-Emitter Saturation Voltage- 0.4 V
DC Collector/Base Gain hfe Min60
Mounting StyleSMD/SMT
Width1.35 mm
Length2.2 mm
Minimum Operating Temperature- 55 C
Height1 mm
JPHTS8541210101
Package / CaseSOT-363-6
CNHTS8541210000
CAHTS8541210000
Maximum Operating Temperature+ 150 C
PackagingCut Tape
PackagingMouseReel
PackagingReel
ImageON Semiconductor MBT3906DW1T1G
Factory Pack Quantity3000
Product CategoryBipolar Transistors - BJT
BrandON Semiconductor
RoHS Details
TARIC8541210000
SeriesMBT3906DW1
Product TypeBJTs - Bipolar Transistors
DescriptionBipolar Transistors - BJT SS GP XSTR PNP 40V
SubcategoryTransistors
ManufacturerON Semiconductor
USHTS8541210095
Unit Weight0.000212 oz
Part # AliasesMBT3906DW1T2G
Pd - Power Dissipation150 mW
Moisture Sensitivity Level1 (Unlimited)