参数项参数值
参数项参数值
Forward Transconductance - Min2.7 S
TechnologySi
Id - Continuous Drain Current2.9 A
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage2.1 V
Transistor PolarityP-Channel
Rds On - Drain-Source Resistance130 mOhms
Transistor Type1 P-Channel
Typical Turn-Off Delay Time26 ns
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time6.7 ns
Height1.6 mm
Mounting StyleSMD/SMT
Length6.5 mm
Width3.5 mm
MXHTS85412999
Qg - Gate Charge22 nC
PackagingReel
PackagingMouseReel
PackagingCut Tape
ImageInfineon Technologies BSP613PH6327XTSA1
KRHTS8541299000
Maximum Operating Temperature+ 150 C
JPHTS8541290100
Channel ModeEnhancement
Package / CasePG-SOT-223-4
Minimum Operating Temperature- 55 C
CNHTS8541290000
CAHTS8541290000
Fall Time7 ns
TARIC8541290000
RoHS Details
Unit Weight0.003951 oz
Pd - Power Dissipation1.8 W
SeriesBSP613
BrandInfineon Technologies
DescriptionMOSFET P-Ch -60V -2.9A SOT-223-3
Part # AliasesBSP613P H6327 SP001058788
ManufacturerInfineon
Product TypeMOSFET
Factory Pack Quantity1000
SubcategoryMOSFETs
Vds - Drain-Source Breakdown Voltage60 V
Product CategoryMOSFET
USHTS8541290095
Number of Channels1 Channel
Rise Time9 ns
Moisture Sensitivity Level1 (Unlimited)