参数项参数值
参数项参数值
ConfigurationSingle
Id - Continuous Drain Current45 A
Transistor PolarityN-Channel
Vgs th - Gate-Source Threshold Voltage2.8 V
TechnologySi
Rds On - Drain-Source Resistance6.7 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time20 ns
Height16.15 mm
Vgs - Gate-Source Voltage- 20 V, + 20 V
Width4.85 mm
Length10.65 mm
Typical Turn-On Delay Time12 ns
Mounting StyleThrough Hole
Factory Pack Quantity500
CNHTS8541290000
MXHTS85412999
KRHTS8541299000
Unit Weight0.211644 oz
Qg - Gate Charge32 nC
JPHTS8541290100
Package / CaseTO-220-3
CAHTS8541290000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
PackagingTube
SeriesOptiMOS 5
Channel ModeEnhancement
TARIC8541290000
Product CategoryMOSFET
ManufacturerInfineon
DescriptionMOSFET MV POWER MOS
BrandInfineon Technologies
ImageInfineon Technologies IPA060N06NXKSA1
Fall Time7 ns
SubcategoryMOSFETs
Product TypeMOSFET
USHTS8541290095
Part # AliasesIPA060N06N SP001099646
TradenameOptiMOS
Vds - Drain-Source Breakdown Voltage60 V
Number of Channels1 Channel
Rise Time12 ns
Moisture Sensitivity Level1 (Unlimited)