参数项参数值
参数项参数值
DC Current Gain hFE Max560
Gain Bandwidth Product fT200 MHz, 250 MHz
Collector- Base Voltage VCBO40 V
Maximum DC Collector Current0.5 A
Collector- Emitter Voltage VCEO Max32 V
Continuous Collector Current500 mA
ConfigurationDual
TechnologySi
Transistor PolarityNPN, PNP
Emitter- Base Voltage VEBO5 V
DC Collector/Base Gain hfe Min120
Width1.6 mm
Height1.1 mm
MXHTS85412999
Length2.9 mm
CNHTS8541290000
KRHTS8541299000
Mounting StyleSMD/SMT
JPHTS8541290100
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
CAHTS8541290000
TARIC8541290000
PackagingMouseReel
PackagingCut Tape
PackagingReel
BrandROHM Semiconductor
RoHS Details
Product CategoryBipolar Transistors - BJT
SeriesIMZ4T
SubcategoryTransistors
Factory Pack Quantity3000
ManufacturerROHM Semiconductor
Product TypeBJTs - Bipolar Transistors
Pd - Power Dissipation300 mW
Part # AliasesIMZ4
USHTS8541290095
DescriptionBipolar Transistors - BJT NPN/PNP 32V 500MA