参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage1 V
TechnologySi
Id - Continuous Drain Current2 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
CNHTS8541290000
Typical Turn-On Delay Time3.5 ns
MXHTS85412999
Rds On - Drain-Source Resistance178 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time11 ns
KRHTS8541299000
Minimum Operating Temperature- 55 C
JPHTS8541290100
Mounting StyleSMD/SMT
Package / CaseSOT-223-3
Maximum Operating Temperature+ 150 C
CAHTS8541290000
PackagingCut Tape
PackagingReel
PackagingMouseReel
Qg - Gate Charge8.7 nC
BrandDiodes Incorporated
TARIC8541290000
ManufacturerDiodes Incorporated
Factory Pack Quantity2500
ImageDiodes Incorporated DMN15H310SE-13
Product CategoryMOSFET
RoHS Details
SeriesDMN15
DescriptionMOSFET 150V N-Ch Enh Fet 310mOhm 10Vgs 2.0A
Product TypeMOSFET
SubcategoryMOSFETs
Channel ModeEnhancement
USHTS8541290095
Fall Time11 ns
Unit Weight0.003951 oz
Pd - Power Dissipation1.9 W
Vds - Drain-Source Breakdown Voltage150 V
Number of Channels1 Channel
Rise Time7.8 ns