参数项参数值
参数项参数值
DC Current Gain hFE Max200 at 2 mA, 5 V
Gain Bandwidth Product fT250 MHz
Collector- Base Voltage VCBO50 V
Maximum DC Collector Current0.1 A
Collector- Emitter Voltage VCEO Max45 V
ConfigurationDual
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO6 V
QualificationAEC-Q101
DC Collector/Base Gain hfe Min200 at 2 mA, 5 V
Width1.35 mm
Height1 mm
Length2.2 mm
MXHTS85412101
KRHTS8541219000
Package / CaseTSSOP-6
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
JPHTS8541210101
Minimum Operating Temperature- 65 C
CAHTS8541210000
CNHTS8541210000
PackagingReel
PackagingCut Tape
PackagingMouseReel
TARIC8541210000
RoHS Details
Unit Weight0.000212 oz
Pd - Power Dissipation300 mW
ImageNexperia BCM847BS,115
Part # Aliases934058507115
BrandNexperia
Factory Pack Quantity3000
Product TypeBJTs - Bipolar Transistors
Product CategoryBipolar Transistors - BJT
SubcategoryTransistors
ManufacturerNexperia
USHTS8541210075
Moisture Sensitivity Level1 (Unlimited)