参数项参数值
参数项参数值
Collector- Base Voltage VCBO140 V
ConfigurationSingle
Maximum DC Collector Current0.6 A
Collector- Emitter Voltage VCEO Max160 V
Continuous Collector Current0.6 A
Transistor PolarityNPN
TechnologySi
Emitter- Base Voltage VEBO6 V
Height0.94 mm
Collector-Emitter Saturation Voltage0.15 V
DC Collector/Base Gain hfe Min80
Factory Pack Quantity10000
Length2.9 mm
Width1.3 mm
PackagingReel
PackagingCut Tape
PackagingMouseReel
Minimum Operating Temperature- 55 C
Package / CaseSOT-23-3
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
BrandON Semiconductor
Product TypeBJTs - Bipolar Transistors
DescriptionBipolar Transistors - BJT 600mA 160V NPN
RoHS Details
Product CategoryBipolar Transistors - BJT
SeriesMMBT5551L
ManufacturerON Semiconductor
SubcategoryTransistors
Unit Weight0.000282 oz
Pd - Power Dissipation225 mW
Moisture Sensitivity Level1 (Unlimited)