参数项参数值
参数项参数值
Gain Bandwidth Product fT200 MHz
ConfigurationSingle
Collector- Base Voltage VCBO60 V
Collector- Emitter Voltage VCEO Max60 V
Continuous Collector Current600 mA
Transistor PolarityPNP
TechnologySi
Emitter- Base Voltage VEBO5 V
CNHTS8541210000
KRHTS8541219000
MXHTS85412101
Collector-Emitter Saturation Voltage1.6 V
Mounting StyleSMD/SMT
Minimum Operating Temperature- 65 C
JPHTS8541210101
CAHTS8541210000
Package / CaseSOT-23-3
PackagingMouseReel
PackagingReel
PackagingCut Tape
Maximum Operating Temperature+ 150 C
RoHS Details
BrandInfineon Technologies
Factory Pack Quantity3000
Product CategoryBipolar Transistors - BJT
ImageInfineon Technologies MMBT2907ALT1HTSA1
TARIC8541210000
SubcategoryTransistors
SeriesMMBT2907
Product TypeBJTs - Bipolar Transistors
ManufacturerInfineon
DescriptionBipolar Transistors - BJT AF TRANS GP BJT PNP 60V 0.6A
USHTS8541210095
Unit Weight0.000282 oz
Part # AliasesMMBT 2907A LT1 SP000011179
Pd - Power Dissipation330 mW
Moisture Sensitivity Level1 (Unlimited)