参数项参数值
参数项参数值
Forward Transconductance - Min0.5 S
ConfigurationSingle
TechnologySi
Id - Continuous Drain Current1.7 A
Transistor PolarityN-Channel
Vgs th - Gate-Source Threshold Voltage2 V
Rds On - Drain-Source Resistance3.4 Ohms
Typical Turn-Off Delay Time25 ns
Vgs - Gate-Source Voltage- 20 V, + 20 V
MXHTS85412999
Typical Turn-On Delay Time12 ns
CNHTS8541290000
RoHS Details
Qg - Gate Charge6.5 nC
DescriptionMOSFET Nch 600V 2A TO-252 (DPAK)
Package / CaseTO-252-3
Maximum Operating Temperature+ 150 C
Mounting StyleSMD/SMT
Minimum Operating Temperature- 55 C
CAHTS8541290000
Channel ModeEnhancement
JPHTS8541290100
BrandROHM Semiconductor
TARIC8541290000
PackagingCut Tape
PackagingMouseReel
PackagingReel
Product CategoryMOSFET
SubcategoryMOSFETs
Factory Pack Quantity2500
ManufacturerROHM Semiconductor
Product TypeMOSFET
Pd - Power Dissipation26 W
USHTS8541290095
Vds - Drain-Source Breakdown Voltage600 V
Number of Channels1 Channel
Rise Time16 ns