参数项参数值
参数项参数值
Forward Transconductance - Min1.5 S
ConfigurationSingle
Id - Continuous Drain Current2 A
Transistor PolarityN-Channel
Vgs th - Gate-Source Threshold Voltage1 V
TechnologySi
Rds On - Drain-Source Resistance4 Ohms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time35 ns
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time16 ns
Mounting StyleSMD/SMT
Factory Pack Quantity2500
CNHTS8541290000
MXHTS85412999
KRHTS8541299000
Unit Weight0.011993 oz
Qg - Gate Charge11 nC
JPHTS8541290100
Package / CaseTO-252-3
CAHTS8541290000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
ManufacturerROHM Semiconductor
SeriesRDD023N50
PackagingReel
Channel ModeEnhancement
TARIC8541290000
Product CategoryMOSFET
BrandROHM Semiconductor
RoHS Details
DescriptionMOSFET 10V Drive Nch MOSFET
ImageROHM Semiconductor RDD023N50TL
Fall Time32 ns
SubcategoryMOSFETs
Product TypeMOSFET
Pd - Power Dissipation51 W
Part # AliasesRDD023N50
USHTS8541290095
Vds - Drain-Source Breakdown Voltage500 V
Number of Channels1 Channel
Rise Time13 ns